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TEA5764HN - FM radio RDS

TEA5764HN_1458767.PDF Datasheet

 
Part No. TEA5764HN
Description FM radio RDS

File Size 263.34K  /  64 Page  

Maker


NXP Semiconductors



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(CHINA HK & SZ)
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Part: TEA5764UK
Maker: NXP
Pack: BGA
Stock: 300093
Unit price for :
    50: $1.11
  100: $1.05
1000: $1.00

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TEA5764HN FM radio RDS
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S8119 MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
Hamamatsu Photonics K.K.
S7686 MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
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From old datasheet system
77-88MHz,12.5V,7W, FM PORTABLE RADIO
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
IRFM250 N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
Electronic Theatre Controls, Inc.
SEME-LAB
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SST3585 SST358512 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
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